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真菌深层培养中的氧化应激。

Oxidative stress in submerged cultures of fungi.

作者信息

Bai Zhonghu, Harvey Linda M, McNeil Brian

机构信息

Strathclyde Fermentation Center, Department of Bioscience, Strathclyde University, Glasgow, UK.

出版信息

Crit Rev Biotechnol. 2003;23(4):267-302. doi: 10.1080/07388550390449294.

Abstract

It has been known for many years that oxygen (O2) may have toxic effects on aerobically growing microorganisms, mainly due to the threat arising from reactive oxygen species (ROS). In submerged culture industrial fermentation processes, maintenance of adequate levels of O2 (usually measured as dissolved oxygen tension (DOT)) can often be critical to the success of the manufacturing process. In viscous cultures of filamentous cultures, actively respiring, supplying adequate levels of O2 to the cultures by conventional air sparging is difficult and various strategies have been adopted to improve or enhance O2 transfer. However, adoption of those strategies to maintain adequate levels of DOT, that is, to avoid O2 limitation, may expose the fungi to potential oxidative damage caused by enhanced flux through the respiratory system. In the past, there have been numerous studies investigating the effects of DOT on fungal bioprocesses. Generally, in these studies moderately enhanced levels of O2 supply resulted in improvement in growth, product formation and acceptable morphological changes, while the negative impact of higher levels of DOT on morphology and product synthesis were generally assumed to be a consequence of "oxidative stress." However, very little research has actually been focused on investigation of this implicit link, and the mechanisms by which such effects might be mediated within industrial fungal processes. To elucidate this neglected topic, this review first surveys the basic knowledge of the chemistry of ROS, defensive systems in fungi and the effects of DOT on fungal growth, metabolism and morphology. The physiological responses of fungal cells to oxidative stress imposed by artificial and endogenous stressors are then critically reviewed. It is clear that fungi have a range of methods available to minimize the negative impacts of elevated ROS, but also that development of the various defensive systems or responses, can itself have profound consequences upon many process-related parameters. It is also clear that many of the practically convenient and widely used experimental methods of simulating oxidative stress, for example, addition of exogenous menadione or hydrogen peroxide, have effects on fungal cultures quite distinct from the effects of elevated levels of O2, and care must thus be exercised in the interpretation of results from such studies. The review critically evaluates our current understanding of the responses of fungal cultures to elevated O2 levels, and highlights key areas requiring further research to remedy gaps in knowledge.

摘要

多年来人们已经知道,氧气(O₂)可能对需氧生长的微生物产生毒性作用,这主要是由于活性氧(ROS)带来的威胁。在深层培养工业发酵过程中,维持足够水平的氧气(通常以溶解氧张力(DOT)来衡量)往往对生产过程的成功至关重要。在丝状菌的粘性培养物中,由于细胞活跃呼吸,通过传统的空气喷射向培养物中供应足够水平的氧气很困难,因此人们采用了各种策略来改善或增强氧气传递。然而,采用这些策略来维持足够水平的DOT,即避免氧气限制,可能会使真菌暴露于因呼吸系统通量增加而导致的潜在氧化损伤中。过去,有许多研究调查了DOT对真菌生物过程的影响。一般来说,在这些研究中,适度提高氧气供应水平会导致生长、产物形成得到改善,形态变化也可接受,而较高水平的DOT对形态和产物合成的负面影响通常被认为是“氧化应激”的结果。然而,实际上很少有研究专注于调查这种隐含的联系,以及在工业真菌过程中这种影响可能通过何种机制介导。为了阐明这个被忽视的主题,本综述首先概述了ROS的化学基础知识、真菌中的防御系统以及DOT对真菌生长、代谢和形态的影响。然后对真菌细胞对人工和内源性应激源施加的氧化应激的生理反应进行了批判性综述。很明显,真菌有一系列方法可用于将ROS升高的负面影响降至最低,但各种防御系统或反应的发展本身也可能对许多与过程相关的参数产生深远影响。同样明显的是,许多实际方便且广泛使用的模拟氧化应激的实验方法,例如添加外源性甲萘醌或过氧化氢,对真菌培养物的影响与氧气水平升高的影响截然不同,因此在解释此类研究结果时必须谨慎。本综述批判性地评估了我们目前对真菌培养物对升高的氧气水平的反应的理解,并突出了需要进一步研究以弥补知识空白的关键领域。

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