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发育中大脑内辐射诱导的祖细胞死亡对促红细胞生成素治疗和半胱天冬酶抑制具有抗性。

Irradiation-induced progenitor cell death in the developing brain is resistant to erythropoietin treatment and caspase inhibition.

作者信息

Fukuda H, Fukuda A, Zhu C, Korhonen L, Swanpalmer J, Hertzman S, Leist M, Lannering B, Lindholm D, Björk-Eriksson T, Marky I, Blomgren K

机构信息

Perinatal Center, Department of Physiology, Göteborg University, Box 432, SE 405 30 Göteborg, Sweden.

出版信息

Cell Death Differ. 2004 Nov;11(11):1166-78. doi: 10.1038/sj.cdd.4401472.

Abstract

One hemisphere of postnatal day 8 (P8) rats or P10 mice was irradiated with a single dose of 4-12 Gy, and animals were killed from 2 h to 8 weeks after irradiation (IR). In the subventricular zone (SVZ) and the granular cell layer (GCL) of the dentate gyrus, harboring neural and other progenitor cells, nitrosylation and p53 peaked 2-12 h after IR, followed by markers for active caspase-3, apoptosis-inducing factor and TUNEL (6-24 h). Ki67-positive (proliferating) cells had disappeared by 12 h and partly reappeared by 7 days post-IR. The SVZ and GCL areas decreased approximately 50% 7 days after IR. The development of white matter was hampered, resulting in 50-70% less myelin basic protein staining. Pretreatment with erythropoietin did not confer protection against IR. Caspase inhibition by overexpression of XIAP prevented caspase-9 and caspase-3 activation but not cell death, presumably because of increased caspase-independent cell death.

摘要

对出生后第8天(P8)的大鼠或出生后第10天(P10)的小鼠的一个脑半球进行单次4 - 12 Gy的照射,照射后(IR)2小时至8周处死动物。在含有神经和其他祖细胞的脑室下区(SVZ)和齿状回颗粒细胞层(GCL)中,亚硝基化和p53在照射后2 - 12小时达到峰值,随后是活性半胱天冬酶 - 3、凋亡诱导因子和TUNEL标记物(6 - 24小时)。Ki67阳性(增殖)细胞在照射后12小时消失,在照射后7天部分重新出现。照射后7天,SVZ和GCL区域减少约50%。白质发育受阻,导致髓鞘碱性蛋白染色减少50 - 70%。促红细胞生成素预处理不能提供抗照射保护。XIAP过表达抑制半胱天冬酶可防止半胱天冬酶 - 9和半胱天冬酶 - 3激活,但不能防止细胞死亡,可能是因为半胱天冬酶非依赖性细胞死亡增加。

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