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Hollow boron nitride (BN) nanocages and BN-nanocage-encapsulated nanocrystals.

作者信息

Zhu Ying-Chun, Bando Yoshio, Yin Long-Wei, Golberg Dmitri

机构信息

Advanced Materials Laboratory, National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan.

出版信息

Chemistry. 2004 Aug 6;10(15):3667-72. doi: 10.1002/chem.200400002.

Abstract

Hollow boron nitride (BN) nanocages (nanospheres, image on the left) and BN-nanocage-encapsulated GaN nanocrystals (right) have been synthesized by using a homemade B-N-O precursors. The as-prepared BN hollow nanocages have typically spherical morphologies with diameters ranging from 30 to 200 nm. The nanocages have crystalline structures. Peanutlike nanocages with double walls have also been observed; their internal space is divided into seperated compartments by the internal walls. The method is extended to sheathe nanocrystals with BN nanocages; BN-shell/GaN-core nanostructures have been successfully fabriacted. The method may be generally applicable to the fabrication BN-sheathed nanocrystals.

摘要

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