Roddaro Stefano, Pellegrini Vittorio, Beltram Fabio, Biasiol Giorgio, Sorba Lucia
NEST-INFM, Scuola Normale Superiore, Piazza dei Cavalieri 7, I-56126 Pisa, Italy.
Phys Rev Lett. 2004 Jul 23;93(4):046801. doi: 10.1103/PhysRevLett.93.046801. Epub 2004 Jul 22.
Gate-voltage control of interedge tunneling at a split-gate constriction in the fractional quantum Hall regime is reported. Quantitative agreement with the behavior predicted for out-of-equilibrium quasiparticle transport between chiral Luttinger liquids is shown at low temperatures at specific values of the backscattering strength. When the latter is lowered by changing the gate voltage, the zero-bias peak of the tunneling conductance evolves into a minimum, and a nonlinear quasiholelike characteristic emerges. Our analysis emphasizes the role of the local filling factor in the split-gate constriction region.
报道了在分数量子霍尔体系中，分裂栅极缩颈处边缘间隧穿的栅极电压控制。在低温下，对于特定背散射强度值，展现出与手性卢廷格液体之间非平衡准粒子输运所预测行为的定量一致性。当通过改变栅极电压降低背散射强度时，隧穿电导的零偏置峰演变为最小值，并且出现非线性类准空穴特征。我们的分析强调了分裂栅极缩颈区域中局部填充因子的作用。
