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Thermal stability and electronic structure of atomically uniform Pb films on Si(111).

作者信息

Upton M H, Wei C M, Chou M Y, Miller T, Chiang T C

机构信息

Frederick Seitz Materials Research Laboratory, Department of Physics, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801-2902, USA.

出版信息

Phys Rev Lett. 2004 Jul 9;93(2):026802. doi: 10.1103/PhysRevLett.93.026802. Epub 2004 Jul 7.

DOI:10.1103/PhysRevLett.93.026802
PMID:15323937
Abstract

Atomically uniform Pb films are successfully prepared on Si(111), despite a large lattice mismatch. Angle-resolved photoemission measurements of the electronic structure show layer-resolved quantum well states which can be correlated with dramatic variations in thermal stability. The odd film thicknesses N = 5, 7, and 9 monolayers show sharp quantum well states. The even film thicknesses N = 6 and 8 do not, but are much more stable than the odd film thicknesses. This correlation is discussed in terms of a total energy calculation and Friedel-like oscillations in properties.

摘要

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