Ahn J R, Byun J H, Koh H, Rotenberg E, Kevan S D, Yeom H W
Center for Atomic Wires and Layers, Yonsei University, Seoul 120-749, Korea.
Phys Rev Lett. 2004 Sep 3;93(10):106401. doi: 10.1103/PhysRevLett.93.106401. Epub 2004 Aug 30.
One dimensional (1D) metals are unstable at low temperature undergoing a metal-insulator transition coupled with a periodic lattice distortion, a Peierls transition. Angle-resolved photoemission study for the 1D metallic chains of In on Si(111), featuring a metal-insulator transition and triple metallic bands, clarifies in detail how the multiple band gaps are formed at low temperature. In addition to the gap opening for a half-filled ideal 1D band with a proper Fermi surface nesting, two other quasi-1D metallic bands are found to merge into a single band, opening a unique but k-dependent energy gap through an interband charge transfer. This result introduces a novel gap-opening mechanism for a multiband Peierls system where the interband interaction is important.
一维(1D)金属在低温下不稳定,会经历金属-绝缘体转变并伴有周期性晶格畸变,即佩尔斯转变。对硅(111)上铟的一维金属链进行的角分辨光电子能谱研究,其具有金属-绝缘体转变和三重金属带,详细阐明了低温下多个带隙是如何形成的。除了具有适当费米面嵌套的半填充理想一维带隙打开外,还发现另外两个准一维金属带合并成一个带,通过带间电荷转移打开一个独特但依赖于波矢的能隙。这一结果为带间相互作用很重要的多带佩尔斯系统引入了一种新颖的能隙打开机制。