Gatti Carlo, Bertini Luca
CNR-ISTM Istituto di Scienze e Tecnologie Molecolari, via Golgi 19, 20133 Milan, Italy.
Acta Crystallogr A. 2004 Sep;60(Pt 5):438-49. doi: 10.1107/S0108767304017258. Epub 2004 Aug 26.
This work introduces a local form for the source function, from each atom, for the electron-density value at a given point. The source function enables one to equate the value of the electron density at any point within a molecule to a sum of atomic contributions and thus to view properties of the density at representative points, such as the bond critical points, from a new perspective. The local form of the function introduces further detail. When plotted along a bond path and with reference to the bond critical point (b.c.p.), the source function shows which regions of the atoms involved in the bonding are accumulating or removing electronic charge at the b.c.p. The local form of the source function therefore represents an interesting fingerprint of a given bonding interaction. The local source may be expressed as a sum of two contributions, related to the kinetic energy density and electronic potential energy density, respectively. This approach gives further physical insight into why an atomic region is accumulating or removing charge at the b.c.p. The local form of the source function is applied to the study of the second-row diatomic hydride series and of a number of prototypical hydrogen-bonded systems. Differences in the local source contributions to the density at bond critical points due to chemical bonding (deformation density) and crystallization (interaction density) are also explored and found to be more informative and experimentally detectable than are the corresponding changes for the bond-critical-point properties of weak intermolecular interactions. This result might be of potential interest when judging the data quality of a charge-density experimental determination. Although the present paper deals with electron densities derived from theoretical computations only, both the source function and its local form should also be easily obtainable from a charge-density quality X-ray diffraction experiment.
这项工作引入了源函数的局域形式,用于描述来自每个原子对给定位置电子密度值的贡献。源函数使人们能够将分子内任意点的电子密度值等同于原子贡献的总和,从而从新的视角看待密度在代表性点(如键临界点)处的性质。该函数的局域形式引入了更多细节。当沿着键路径绘制并参考键临界点(b.c.p.)时,源函数显示了参与键合的原子的哪些区域在键临界点处积累或移除电子电荷。因此,源函数的局域形式代表了给定键合相互作用的一个有趣的指纹。局域源可以表示为分别与动能密度和电子势能密度相关的两项贡献之和。这种方法进一步从物理角度解释了为什么原子区域在键临界点处积累或移除电荷。源函数的局域形式被应用于研究第二周期双原子氢化物系列以及一些典型的氢键体系。还探讨了由于化学键合(变形密度)和结晶(相互作用密度)导致的键临界点处局域源对密度贡献的差异,发现这些差异比弱分子间相互作用的键临界点性质的相应变化更具信息性且在实验上可检测。当判断电荷密度实验测定的数据质量时,这一结果可能具有潜在的意义。尽管本文仅涉及从理论计算得出的电子密度,但源函数及其局域形式也应该很容易从高质量的电荷密度X射线衍射实验中获得。