Gatti Carlo, Cargnoni Fausto, Bertini Luca
CNR-ISTM, Istituto di Scienze e Tecnologie Molecolari, via C. Golgi 19, 20133 Milano, Italy.
J Comput Chem. 2003 Mar;24(4):422-36. doi: 10.1002/jcc.10205.
The source function, which enables one to equate the value of the electron density at any point within a molecule to a sum of atomic contributions, has been applied to a number of cases. The source function is a model-independent, quantitative measure of the relative importance of an atom's or group's contribution to the density at any point in a system, and it represents a potentially interesting tool to provide chemical information. It is shown that the source contribution from H to the electron density rho(b) at the bond critical point in HX diatomics decreases with increasing X's electronegativity, and that this decrease is a result of significant changes in the Laplacian distribution within the H-basin. It is also demonstrated that the source function from Li to rho(b) in LiX diatomics is a more sensitive index of atomic transferability than it is the lithium atomic energy or population. The observed changes are such as to ensure a constant percentage source contribution from Li to rho(b) throughout the LiX series, rather than a constant source as one would expect in the limit of perfect atomic transferability. Application of the source function to planar lithium clusters has revealed that the source function clearly discriminates between a nonnuclear electron density maximum and a maximum associated to a nucleus, on the basis of the relative weight of the source contributions from the basin associated to the maximum and from the remaining basins in the cluster. The source function has also allowed for a classification of hydrogen bonds in terms of characteristic source contributions to the density at the H-bond critical point from the H involved in the H-bond, the H-donor D, and the H-acceptor A. The source contribution from the H appears as the most distinctive marker of the H-bond strength, being highly negative for isolated H-bonds, slightly negative for polarized assisted H-bonds, close to zero for resonance-assisted H-bonds, and largely positive for charge-assisted H-bonds. The contributions from atoms other than H, D, and A strongly increase with decreasing H-bond strength, consistently with the parallel increased electrostatic character of the interaction. The correspondence between the classification provided by the Electron Localization Function topologic approach and by the source function has been highlighted. It is concluded that the source function represents a practical tool to disclose the local and nonlocal character of the electron density distributions and to quantify such a locality and nonlocality in terms of a physically sound and appealing chemical partitioning.
源函数能够将分子内任意一点的电子密度值等同于原子贡献的总和,现已应用于多个案例。源函数是一种与模型无关的定量方法,用于衡量原子或基团对体系中任意一点密度贡献的相对重要性,它是提供化学信息的一个潜在有趣工具。结果表明,在HX双原子分子中,H对键临界点处电子密度ρ(b)的源贡献随X电负性的增加而减小,且这种减小是H区域内拉普拉斯分布显著变化的结果。还证明,在LiX双原子分子中,Li对ρ(b)的源函数比锂原子能量或布居数更能灵敏地反映原子转移性。观察到的变化确保了在整个LiX系列中,Li对ρ(b)的源贡献百分比保持恒定,而不是像在完美原子转移性极限情况下所预期的那样保持恒定源贡献。将源函数应用于平面锂簇表明,基于与最大值相关区域以及簇中其余区域的源贡献相对权重,源函数能清晰地区分非核电子密度最大值和与核相关的最大值。源函数还能根据氢键中涉及的H、H供体D和H受体A对氢键临界点处密度的特征源贡献对氢键进行分类。H的源贡献似乎是氢键强度最显著的标志,对于孤立氢键为高度负值,对于极化辅助氢键为轻微负值,对于共振辅助氢键接近零,对于电荷辅助氢键则为很大的正值。除H、D和A之外的原子的贡献随着氢键强度的降低而显著增加,这与相互作用中静电特征的平行增加一致。强调了电子定域函数拓扑方法和源函数所提供分类之间的对应关系。结论是,源函数是一个实用工具,可用于揭示电子密度分布中的局域和非局域特征,并根据合理且有吸引力的化学划分对这种局域性和非局域性进行量化。