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RTe₂(R = La,Ce)的电子结构:CeTe₁.₈₂中压力诱导超导性的线索

Electronic structures of RTe2 (R = La,Ce): a clue to the pressure-induced superconductivity in CeTe1.82.

作者信息

Shim J H, Kang J-S, Min B I

机构信息

Department of Physics, Pohang University of Science and Technology, Pohang 790-784, Korea.

出版信息

Phys Rev Lett. 2004 Oct 8;93(15):156406. doi: 10.1103/PhysRevLett.93.156406. Epub 2004 Oct 7.

Abstract

Electronic structures of RTe2 (R=La,Ce) have been investigated by using the local spin density approximation (LSDA) and the LSDA + U (U: on-site Coulomb interaction) band methods. Both LaTe2 and CeTe2 show the very similar Fermi surface nesting features along the [100] direction, which drive the charge-density wave (CDW) instability in the Te(1) sheets. The contribution near E(F) from Ce 4f states is negligible in agreement with the measured ARPES spectra. In the semimetallic CDW-distorted RTe2, both Te vacancy and pressure induce the charge transfer from Te(1) 5p to R 5d states, producing the enhanced density of states at E(F). We suggest that these increased self-doped Te(1) 5p hole carriers are responsible for the pressure-induced superconductivity in nonstoichiometric CeTe1.82.

摘要

利用局域自旋密度近似(LSDA)和LSDA + U(U:在位库仑相互作用)能带方法研究了RTe2(R = La,Ce)的电子结构。LaTe2和CeTe2在[100]方向上都表现出非常相似的费米面嵌套特征,这驱动了Te(1)层中的电荷密度波(CDW)不稳定性。与测量的角分辨光电子能谱(ARPES)一致,Ce 4f态在费米能级(E(F))附近的贡献可忽略不计。在半金属性的CDW畸变的RTe2中,Te空位和压力都会诱导电荷从Te(1) 5p转移到R 5d态,从而在E(F)处产生增强的态密度。我们认为,这些增加的自掺杂Te(1) 5p空穴载流子是化学计量比非整比的CeTe1.82中压力诱导超导性的原因。

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