纤细裸藻对电离辐射抗性的光依赖性

Light dependency of resistance to ionizing radiation in Euglena gracilis.

作者信息

Hayashi Hirotaka, Narumi Issay, Wada Seiichi, Kikuchi Masahiro, Furuta Masakazu, Uehara Kaku, Watanabe Hiroshi

机构信息

Research Institute for Advanced Science and Technology, Osaka Prefecture University, 1-1 Gakuencho, Sakai 599-8531, Japan.

出版信息

J Plant Physiol. 2004 Oct;161(10):1101-6. doi: 10.1016/j.jplph.2004.04.005.

DOI:10.1016/j.jplph.2004.04.005

PMID:15535119

Abstract

The resistance of Euglena gracilis strains Z (wild type) and SM-ZK (chloroplast-deficient mutant) to ionizing radiation was investigated. The colony forming ability of E. gracilis strain Z was higher than that of strain SM-ZK after 60Cogamma-irradiation. For both strains, the resistance of light-grown cells was higher than that of dark-grown cells, suggesting that the light conditions during culture contribute to the radiation resistance of E. gracilis. The comet assay showed that the ability of rejoining DNA double-strand breaks (dsb) was much higher in the light-grown cells. These results suggest that E. gracilis possesses a light-induced repair system to cope with DNA dsb.

摘要

研究了纤细裸藻Z菌株（野生型）和SM-ZK菌株（叶绿体缺陷型突变体）对电离辐射的抗性。经60Coγ射线辐照后，纤细裸藻Z菌株的集落形成能力高于SM-ZK菌株。对于这两种菌株，光照培养的细胞比黑暗培养的细胞抗性更高，这表明培养期间的光照条件有助于纤细裸藻的辐射抗性。彗星试验表明，光照培养的细胞中DNA双链断裂（dsb）的重新连接能力要高得多。这些结果表明，纤细裸藻拥有一种光诱导修复系统来应对DNA dsb。