Zou Jian-Wei, Jiang Yong-Jun, Guo Ming, Hu Gui-Xiang, Zhang Bing, Liu Hai-Chun, Yu Qing-Sen
Key Laboratory for Molecular Design and Nutrition Engineering, Ningbo Institute of Technology, Zhejiang University, Ningbo 315100, China.
Chemistry. 2005 Jan 7;11(2):740-51. doi: 10.1002/chem.200400504.
Ab initio calculations have been performed on a series of complexes formed between halogen-containing molecules and ammonia to gain a deeper insight into the nature of halogen bonding. It appears that the dihalogen molecules form the strongest halogen-bonded complexes with ammonia, followed by HOX; the charge-transfer-type contribution has been demonstrated to dominate the halogen bonding in these complexes. For the complexes involving carbon-bound halogen molecules, our calculations clearly indicate that electrostatic interactions are mainly responsible for their binding energies. Whereas the halogen-bond strength is significantly enhanced by progressive fluorine substitution, the substitution of a hydrogen atom by a methyl group in the CH(3)X...NH(3) complex weakened the halogen bonding. Moreover, remote substituent effects have also been noted in the complexes of halobenzenes with different para substituents. The influence of the hybridization state of the carbon atom bonded to the halogen atom has also been examined and the results reveal that halogen-bond strengths decrease in the order HC triple bond CX > H(2)C=CHX approximately O=CHX approximately C(6)H(5)X > CH(3)X. In addition, several excellent linear correlations have been established between the interaction energies and both the amount of charge transfer and the electrostatic potentials corresponding to an electron density of 0.002 au along the R-X axis; these correlations provide good models with which to evaluate the electron-accepting abilities of the covalently bonded halogen atoms. Finally, some positively charged halogen-bonded systems have been investigated and the effect of the charge has been discussed.
已对一系列含卤素分子与氨形成的配合物进行了从头算计算,以更深入地了解卤键的本质。结果表明,二卤分子与氨形成最强的卤键配合物,其次是HOX;已证明电荷转移型贡献在这些配合物的卤键中占主导地位。对于涉及碳键合卤素分子的配合物,我们的计算清楚地表明,静电相互作用主要决定它们的结合能。虽然通过逐步氟取代可显著增强卤键强度,但在CH(3)X...NH(3)配合物中,用甲基取代氢原子会削弱卤键。此外,在具有不同对位取代基的卤苯配合物中也注意到了远程取代基效应。还研究了与卤素原子键合的碳原子的杂化状态的影响,结果表明卤键强度按HC≡CX > H(2)C=CHX ≈ O=CHX ≈ C(6)H(5)X > CH(3)X的顺序降低。此外,在相互作用能与电荷转移量以及沿R-X轴电子密度为0.002 au时的静电势之间建立了几个出色的线性相关性;这些相关性提供了很好的模型来评估共价键合卤素原子的电子接受能力。最后,研究了一些带正电荷的卤键体系并讨论了电荷的影响。