Institute of Computational Quantum Chemistry, College of Chemistry and Material Science, Hebei Normal University , Shijiazhuang 050024, PR China.
J Phys Chem A. 2013 Dec 5;117(48):12959-68. doi: 10.1021/jp408151t. Epub 2013 Nov 22.
Halogen-bonding interactions are highly directional intermolecular interactions that are often important in crystal engineering. In this work, the second-order Møller-Plesset perturbation theory (MP2) calculations and the quantum theory of "atoms in molecules" (QTAIM) and noncovalent interaction (NCI) studies were carried out on a series of X···N halogen bonds between substituted haloperfluoroarenes C6F4XY (X = Cl, Br, I; Y = F, CN, NO2) as bond donors and 1,2-diaminoethane as bond acceptor. Our research supports earlier work that electron-withdrawing substituents produce an enhancement effect on the size of the σ-hole and the maximum positive electrostatic potentials (VS,max), which further strengthens the halogen bonding. The metallic ion M(+) (M(+) = Li(+), Na(+)) has the ability to enhance the size of both the σ-hole and VS,max value with the formation of MNCC6F4X, resulting in more electronic charge transfer away from the halogen atom X and an increase in the strength of the halogen bond. It is found that the values of V(S,max) at the σ-holes are linear in relation to the halogen-bonded interaction energies and the halogen-bonding interaction distance, indicating that the electrostatic interaction plays a key role in the halogen-bonding interactions. The values of V(S,max) at the σ-holes are also linear in relation to the electron density ρ(b), its Laplacian nabla(2)ρb, and -Gb/Vb of XB, indicating that the topological properties (ρb, nabla(2)ρb) and energy properties (Gb, Vb) at the BCPs are correlated with the electrostatic potentials.
卤键相互作用是高度定向的分子间相互作用,在晶体工程中通常很重要。在这项工作中,我们对一系列取代的全氟芳基卤化物 C6F4XY(X = Cl、Br、I;Y = F、CN、NO2)作为供体与 1,2-二氨基乙烷作为受体之间的 X···N 卤键进行了二级 Møller-Plesset 微扰理论(MP2)计算和量子理论的“分子中的原子”(QTAIM)和非共价相互作用(NCI)研究。我们的研究支持早期的工作,即吸电子取代基对 σ-hole 和最大正静电势(VS,max)的尺寸产生增强效应,这进一步增强了卤键。金属离子 M(+)(M(+) = Li(+)、Na(+))具有增强 σ-hole 和 VS,max 值的能力,形成 MNCC6F4X,导致更多的电子电荷从卤素原子 X 转移,并增加卤键的强度。发现 σ-holes 处的 V(S,max)值与卤键相互作用能和卤键相互作用距离呈线性关系,表明静电相互作用在卤键相互作用中起着关键作用。σ-holes 处的 V(S,max)值也与卤键的电子密度 ρ(b)、其拉普拉斯算子 nabla(2)ρb 和 XB 的-Gb/Vb 呈线性关系,表明 BCPs 处的拓扑性质(ρb、nabla(2)ρb)和能量性质(Gb、Vb)与静电势相关。