Kläui M, Vaz C A F, Bland J A C, Wernsdorfer W, Faini G, Cambril E, Heyderman L J, Nolting F, Rüdiger U
Fachbereich Physik, Universität Konstanz, Universitätsstrasse 10, D-78457 Konstanz, Germany.
Phys Rev Lett. 2005 Mar 18;94(10):106601. doi: 10.1103/PhysRevLett.94.106601. Epub 2005 Mar 15.
In a combined numerical and experimental study, we demonstrate that current pulses of different polarity can reversibly and controllably displace a magnetic domain wall (DW) in submicrometer permalloy (NiFe) ring structures. The critical current densities for DW displacement are correlated with the specific spin structure of the DWs and are compared to results of micromagnetic simulations including a spin-torque term. Using a notch, an attractive local pinning potential is created for the DW resulting in a highly reproducible spin structure of the DW, critical for reliable current-induced switching.
在一项结合数值模拟和实验的研究中,我们证明了不同极性的电流脉冲能够在亚微米坡莫合金(NiFe)环形结构中可逆且可控地移动磁畴壁(DW)。磁畴壁位移的临界电流密度与磁畴壁的特定自旋结构相关,并与包含自旋扭矩项的微磁模拟结果进行了比较。利用一个刻痕,为磁畴壁创造了一个有吸引力的局部钉扎势,从而产生了高度可重复的磁畴壁自旋结构,这对于可靠的电流诱导开关至关重要。