Kolesnikov A G, Plotnikov V S, Pustovalov E V, Samardak A S, Chebotkevich L A, Ognev A V, Tretiakov Oleg A
School of Natural Sciences, Far Eastern Federal University, Vladivostok, 690950, Russia.
Center for Spin-Orbitronic Materials, Korea University, Seoul, 02841, Republic of Korea.
Sci Rep. 2018 Oct 25;8(1):15794. doi: 10.1038/s41598-018-33780-6.
We experimentally study the structure and dynamics of magnetic domains in synthetic antiferromagnets based on Co/Ru/Co films. Dramatic effects arise from the interaction among the topological defects comprising the dual domain walls in these structures. Under applied magnetic fields, the dual domain walls propagate following the dynamics of bi-meronic (bi-vortex/bi-antivortex) topological defects built in the walls. Application of an external field triggers a rich dynamical response: The propagation depends on mutual orientation and chirality of bi-vortices and bi-antivortices in the domain walls. For certain configurations, we observe sudden jumps of composite domain walls in increasing field, which are associated with the decay of composite skyrmions. These features allow for the enhanced control of domain-wall motion in synthetic antiferromagnets with the potential of employing them as information carriers in future logic and storage devices.
我们通过实验研究了基于Co/Ru/Co薄膜的合成反铁磁体中磁畴的结构和动力学。这些结构中由双畴壁组成的拓扑缺陷之间的相互作用产生了显著的效应。在施加磁场时，双畴壁会随着壁中内置的双单体（双涡旋/双反涡旋）拓扑缺陷的动力学而传播。外部磁场的施加引发了丰富的动力学响应：传播取决于畴壁中双涡旋和双反涡旋的相互取向和手性。对于某些构型，我们观察到在磁场增加时复合畴壁会突然跳跃，这与复合斯格明子的衰减有关。这些特性使得在合成反铁磁体中能够增强对畴壁运动的控制，有望在未来的逻辑和存储设备中将它们用作信息载体。
