Lenhart Joseph L, Fischer Daniel A, Sambasivan Sharadha, Lin Eric K, Jones Ronald L, Soles Christopher L, Wu Wen-Li, Goldfarb Dario L, Angelopoulos Marie
Sandia National Laboratories, P.O. Box 5800, MS 0888, Albuquerque, NM 87185, USA.
Langmuir. 2005 Apr 26;21(9):4007-15. doi: 10.1021/la047160z.
Near-edge X-ray absorption fine structure spectroscopy (NEXAFS) is utilized to provide insight into surface chemical effects in model photoresist films. First, NEXAFS was used to examine the resist/air interface including surface segregation of a photoacid generator (PAG) and the extent of surface deprotection in the film. The concentration of PAG at the resist-air interface was higher than the bulk concentration, which led to a faster deprotection rate at that interface. Second, a NEXAFS depth profiling technique was utilized to probe for compositional gradients in model resist line edge regions. In the model line edge region, the surface composition profile for the developed line edge was dependent on the post exposure bake time.
近边X射线吸收精细结构光谱（NEXAFS）用于深入了解模型光刻胶薄膜中的表面化学效应。首先，利用NEXAFS研究光刻胶/空气界面，包括光酸产生剂（PAG）的表面偏析以及薄膜中的表面脱保护程度。光刻胶-空气界面处PAG的浓度高于本体浓度，这导致该界面处的脱保护速率更快。其次，利用NEXAFS深度剖析技术探测模型光刻胶线边缘区域的成分梯度。在模型线边缘区域，显影后的线边缘的表面成分分布取决于曝光后烘烤时间。
