Suppr超能文献

原位沉积碳涂层合成碳化硅纳米线

Synthesis of SiC nanowires with in-situ deposition of carbon coating.

作者信息

Yang Wen, Araki Hiroshi, Tang Chengchun, Hu Quanli, Suzuki Hiroshi, Noda Tetsuji

机构信息

National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan.

出版信息

J Nanosci Nanotechnol. 2005 Feb;5(2):255-8. doi: 10.1166/jnn.2005.024.

Abstract

SiC nanowires are effective reinforcement materials in ceramic matrix composites. A compliant coating such as carbon on nanowires is necessary in order to moderate the nanowire/matrix interfacial bounding for taking the most advantages of SiC nanowires. SiC nanowires with an in-situ deposition of carbon shell coating were fabricated by a novel chemical vapor growth process. Highresolution transmission electron microscopy examinations showed that the nanowires consisted of a single crystal beta-SiC core with an amorphous carbon shell 2-5 nm in thickness. The nanowires were straight with a length generally over 10 microm and a diameter 15-150 nm. The growth direction of the core SiC nanowires is (111). A simple three-step growth model for SiC nanowires was proposed based on a vapor-solid growth mechanism. Because the carbon-coated nanowires were grown directly on continuous Tyranno-SA SiC fibers, in-situ application of the present technique on the fabrication of SiC nanowire-reinforced SiC/SiC composites is expected.

摘要

碳化硅纳米线是陶瓷基复合材料中有效的增强材料。为了充分发挥碳化硅纳米线的优势,适度调控纳米线与基体之间的界面结合,在纳米线上涂覆一层如碳这样的柔顺涂层是很有必要的。通过一种新型化学气相生长工艺制备了原位沉积碳壳涂层的碳化硅纳米线。高分辨率透射电子显微镜检查表明,纳米线由单晶β-SiC 芯和厚度为 2 - 5 纳米的非晶碳壳组成。纳米线呈直线状,长度一般超过 10 微米,直径为 15 - 150 纳米。芯部碳化硅纳米线的生长方向为(111)。基于气 - 固生长机制,提出了一种简单的碳化硅纳米线三步生长模型。由于碳包覆纳米线是直接生长在连续的 Tyranno - SA 碳化硅纤维上,预计本技术可原位应用于碳化硅纳米线增强碳化硅/碳化硅复合材料的制备。

文献AI研究员

20分钟写一篇综述,助力文献阅读效率提升50倍。

立即体验

用中文搜PubMed

大模型驱动的PubMed中文搜索引擎

马上搜索

文档翻译

学术文献翻译模型,支持多种主流文档格式。

立即体验