State Key Laboratory for Powder Metallurgy, Central South University, Changsha, Hunan 410083, People's Republic of China.
Nanoscale. 2011 Apr;3(4):1582-91. doi: 10.1039/c0nr00717j. Epub 2011 Feb 8.
Large-scale centimetres-long single-crystal β-SiC nanowires have been prepared using CH(4) as the carbon source and SiO or the mixture of Si and SiO(2) as the silicon source by a simple catalyst-free CVD route under superatmospheric pressure conditions. The nanowries grown on ceramic boat or corundum substrates, with lengths of several centimetres and the average diameters of around 40 nm, were composed of single-crystal β-SiC core along the [111] direction and amorphous SiO(2) shell of about 1-30 nm thick depending on the growth position along the flowing direction of the carrier gas. The total gas pressure is an important factor for the synthesis of the large-scale centimetres-long β-SiC nanowires, which can easily adjust the pressure of the vapors to supersaturation condition. The growth of the nanowires was governed by the Vapor-Solid mechanism. The β-SiC nanowires showed an intense blue light emission at room temperature.
使用 CH(4) 作为碳源，SiO 或 Si 和 SiO(2) 的混合物作为硅源，通过在超大气压条件下的简单无催化剂 CVD 途径，制备了大规模厘米长的单晶β-SiC 纳米线。纳米线在陶瓷舟或刚玉衬底上生长，长度为数厘米，平均直径约为 40nm，由单晶β-SiC 芯组成，沿[111]方向生长，并且根据沿载气流的生长位置，厚度约为 1-30nm 的非晶态 SiO(2)壳。总气压是合成大规模厘米长β-SiC 纳米线的重要因素，它可以轻松地将蒸气压力调节至过饱和状态。纳米线的生长由气-固(Vapor-Solid)机制控制。β-SiC 纳米线在室温下显示出强烈的蓝光发射。
