单晶半导体衬底上的半导体纳米晶体量子点：高分辨率透射电子显微镜

Semiconductor nanocrystal quantum dots on single crystal semiconductor substrates: high resolution transmission electron microscopy.

作者信息

Konkar Atul, Lu Siyuan, Madhukar Anupam, Hughes Steven M, Alivisatos A Paul

机构信息

Nanostructure Materials and Devices Laboratory, Department of Materials Science, University of Southern California, Los Angeles, California 90089-0241, USA.

出版信息

Nano Lett. 2005 May;5(5):969-73. doi: 10.1021/nl0502625.

DOI:10.1021/nl0502625

PMID:15884904

Abstract

We report on high-resolution transmission electron microscope structural studies of InAs colloidal semiconductor nanocrystal quantum dots (NCQDs) on ultrathin GaAs (001) semiconductor single-crystal substrates. We employ a benign method for preparing electron transparent specimens that is suitable for the study of such fragile samples. The image contrast comprises contributions from electron scattering from both the NCs and the GaAs substrate. Long-term electron exposure studies reveal different damage mechanisms operative in the nanocrystals and the substrate.

摘要

我们报道了在超薄GaAs（001）半导体单晶衬底上对InAs胶体半导体纳米晶体量子点（NCQDs）进行的高分辨率透射电子显微镜结构研究。我们采用了一种温和的方法来制备适用于研究此类易碎样品的电子透明样品。图像对比度包括来自纳米晶体和GaAs衬底的电子散射贡献。长期电子暴露研究揭示了纳米晶体和衬底中不同的损伤机制。