Hamaya K, Taniyama T, Kitamoto Y, Fujii T, Yamazaki Y
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan.
Phys Rev Lett. 2005 Apr 15;94(14):147203. doi: 10.1103/PhysRevLett.94.147203. Epub 2005 Apr 13.
Two different ferromagnetic-paramagnetic transitions are detected in (Ga,Mn)As/GaAs(001) epilayers from ac susceptibility measurements: transition at a higher temperature results from (Ga,Mn)As cluster phases with [110] uniaxial anisotropy and that at a lower temperature is associated with a ferromagnetic (Ga,Mn)As matrix with 100 cubic anisotropy. A change in the magnetic easy axis from [100] to [110] with increasing temperature can be explained by the reduced contribution of 100 cubic anisotropy to the magnetic properties above the transition temperature of the (Ga,Mn)As matrix.
通过交流磁化率测量在（Ga，Mn）As/GaAs（001）外延层中检测到两种不同的铁磁 - 顺磁转变：较高温度下的转变源于具有[110]单轴各向异性的（Ga，Mn）As团簇相，而较低温度下的转变与具有100立方各向异性的铁磁（Ga，Mn）As基体相关。随着温度升高，磁易轴从[100]变为[110]，这可以通过在（Ga，Mn）As基体转变温度以上，100立方各向异性对磁性能的贡献降低来解释。
