Kudlinski Alexandre, Martinelli Gilbert, Quiquempois Yves
Laboratoire de Physique des Lasers, Atomes et Molécules, Université des Sciences et Technologies de Lille, Bâtiment P5, 59655 Villeneuve d'Ascq Cedex, France.
Opt Lett. 2005 May 1;30(9):1039-41. doi: 10.1364/ol.30.001039.
The second-order nonlinear profile induced within thermally poled Infrasil silica samples is characterized as a function of the duration of the poling process. For poling durations shorter than 5 min the spatial distribution of the chi(2) susceptibility exhibits a triangular shape. This observation, as well as the maximum value of the electric field recorded during poling (1.9 x 10(9) V/m), is in excellent agreement with charge migration models that involve a single charge carrier. It is shown that for higher poling durations the nonlinear profiles tend to flatten; in that case the charge injection mechanisms cannot be neglected. For another point of view, the experimental method introduced herein has allowed us to determine the mobility of the rapid charge carrier involved in the poling process: micro = 1.5 x 10(-15) m2 V(-1) s(-1) at 250 degrees C.
热极化Infrasil二氧化硅样品中诱导产生的二阶非线性分布被表征为极化过程持续时间的函数。对于极化持续时间短于5分钟的情况，χ(2) 极化率的空间分布呈现三角形形状。这一观察结果以及极化过程中记录的电场最大值（1.9×10(9) V/m）与涉及单一电荷载流子的电荷迁移模型非常吻合。结果表明，对于更长的极化持续时间，非线性分布趋于平缓；在这种情况下，电荷注入机制不可忽略。从另一个角度来看，本文介绍的实验方法使我们能够确定极化过程中快速电荷载流子的迁移率：在250℃时为μ = 1.5×10(-15) m2 V(-1) s(-1) 。
