在氮化镓、氮化铝和氮化铝镓（Al0.5Ga0.5N）衬底上生长均匀排列的氧化锌纳米线异质结阵列。

Growth of uniformly aligned ZnO nanowire heterojunction arrays on GaN, AlN, and Al0.5Ga0.5N substrates.

作者信息

Wang Xudong, Song Jinhui, Li Peng, Ryou Jae Hyun, Dupuis Russell D, Summers Christopher J, Wang Zhong L

机构信息

School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA.

出版信息

J Am Chem Soc. 2005 Jun 1;127(21):7920-3. doi: 10.1021/ja050807x.

DOI:10.1021/ja050807x

PMID:15913382

Abstract

Vertically aligned single-crystal ZnO nanorods have been successfully fabricated on semiconducting GaN, Al0.5Ga0.5N, and AlN substrates through a vapor-liquid-solid process. Near-perfect alignment was observed for all substrates without lateral growth. Room-temperature photoluminescence measurements revealed a strong luminescence peak at approximately 378 nm. This work demonstrates the possibility of growing heterojunction arrays of ZnO nanorods on AlxGa1-xN, which has a tunable band gap from 3.44 to 6.20 eV by changing the Al composition from 0 to 1, and opens a new channel for building vertically aligned heterojunction device arrays with tunable optical properties and the realization of a new class of nanoheterojunction devices.

摘要

通过气-液-固过程，已经成功地在半导体GaN、Al0.5Ga0.5N和AlN衬底上制备出垂直排列的单晶ZnO纳米棒。在所有衬底上均观察到近乎完美的排列，且无横向生长。室温光致发光测量显示在约378nm处有一个强发光峰。这项工作证明了在AlxGa1-xN上生长ZnO纳米棒异质结阵列的可能性，通过将Al组成从0变为1，其带隙可在3.44至6.20eV之间调节，为构建具有可调光学特性的垂直排列异质结器件阵列以及实现新型纳米异质结器件开辟了一条新途径。