Collart Emilie, Shukla Abhay, Gélébart Frédéric, Morand Marc, Malgrange Cécile, Bardou Nathalie, Madouri Ali, Pelouard Jean Luc
Laboratoire de Minéralogie-Cristallographie de Paris, Université Paris 6, Université Paris 7, CNRS, IPGP, Case 115, 4 Place Jussieu, 75252 Paris CEDEX 05, France.
J Synchrotron Radiat. 2005 Jul;12(Pt 4):473-8. doi: 10.1107/S090904950501472X. Epub 2005 Jun 15.
Resonant inelastic X-ray scattering with very high energy resolution is a promising technique for investigating the electronic structure of strongly correlated materials. The demands for this technique are analyzers which deliver an energy resolution of the order of 200 meV full width at half-maximum or below, at energies corresponding to the K-edges of transition metals (Cu, Ni, Co etc.). To date, high resolution under these conditions has been achieved only with diced Ge analyzers working at the Cu K-edge. Here, by perfecting each aspect of the fabrication, it is shown that spherically bent Si analyzers can provide the required energy resolution. Such analyzers have been successfully produced and have greatly improved the energy resolution in standard spherically bent analyzers.
具有非常高能量分辨率的共振非弹性X射线散射是研究强关联材料电子结构的一种很有前景的技术。该技术所需的分析仪要在与过渡金属（铜、镍、钴等）K边对应的能量下，提供半高宽为200毫电子伏特或更低量级的能量分辨率。到目前为止，只有在铜K边工作的切块锗分析仪才能在这些条件下实现高分辨率。在此，通过完善制造的各个方面，结果表明球形弯曲硅分析仪可以提供所需的能量分辨率。此类分析仪已成功制造出来，并大大提高了标准球形弯曲分析仪的能量分辨率。
