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DNA中过量电子转移的电子耦合估计值。

Estimates of electronic coupling for excess electron transfer in DNA.

作者信息

Voityuk Alexander A

机构信息

Institució Catalana de Recerca i Estudis Avançats (ICREA), Institute of Computational Chemistry, Universitat de Girona, Spain.

出版信息

J Chem Phys. 2005 Jul 15;123(3):34903. doi: 10.1063/1.1961400.

Abstract

Electronic coupling V(da) is one of the key parameters that determine the rate of charge transfer through DNA. While there have been several computational studies of V(da) for hole transfer, estimates of electronic couplings for excess electron transfer (ET) in DNA remain unavailable. In the paper, an efficient strategy is established for calculating the ET matrix elements between base pairs in a pi stack. Two approaches are considered. First, we employ the diabatic-state (DS) method in which donor and acceptor are represented with radical anions of the canonical base pairs adenine-thymine (AT) and guanine-cytosine (GC). In this approach, similar values of V(da) are obtained with the standard 6-31G(*) and extended 6-31+ +G(**) basis sets. Second, the electronic couplings are derived from lowest unoccupied molecular orbitals (LUMOs) of neutral systems by using the generalized Mulliken-Hush or fragment charge methods. Because the radical-anion states of AT and GC are well reproduced by LUMOs of the neutral base pairs calculated without diffuse functions, the estimated values of V(da) are in good agreement with the couplings obtained for radical-anion states using the DS method. However, when the calculation of a neutral stack is carried out with diffuse functions, LUMOs of the system exhibit the dipole-bound character and cannot be used for estimating electronic couplings. Our calculations suggest that the ET matrix elements V(da) for models containing intrastrand thymine and cytosine bases are essentially larger than the couplings in complexes with interstrand pyrimidine bases. The matrix elements for excess electron transfer are found to be considerably smaller than the corresponding values for hole transfer and to be very responsive to structural changes in a DNA stack.

摘要

电子耦合V(da)是决定电荷通过DNA转移速率的关键参数之一。虽然已经有几项关于空穴转移的V(da)的计算研究,但DNA中多余电子转移(ET)的电子耦合估计仍然无法获得。在本文中,建立了一种有效的策略来计算π堆积中碱基对之间的ET矩阵元。考虑了两种方法。首先,我们采用非绝热态(DS)方法,其中供体和受体用标准碱基对腺嘌呤-胸腺嘧啶(AT)和鸟嘌呤-胞嘧啶(GC)的自由基阴离子表示。在这种方法中,使用标准的6-31G(*)和扩展的6-31++G(**)基组获得了相似的V(da)值。其次,通过使用广义穆利肯-赫什或片段电荷方法,从中性体系的最低未占据分子轨道(LUMO)导出电子耦合。由于在不使用弥散函数计算的中性碱基对的LUMO能很好地再现AT和GC的自由基阴离子态,因此V(da)的估计值与使用DS方法获得的自由基阴离子态的耦合值非常一致。然而,当使用弥散函数进行中性堆积的计算时,体系的LUMO表现出偶极束缚特征,不能用于估计电子耦合。我们的计算表明,含有链内胸腺嘧啶和胞嘧啶碱基的模型的ET矩阵元V(da)本质上大于含有链间嘧啶碱基的复合物中的耦合。发现多余电子转移的矩阵元比相应的空穴转移值小得多,并且对DNA堆积中的结构变化非常敏感。

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