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金镉硒纳米哑铃状结构中金属-半导体纳米结的电子结构

Electronic structure of metal-semiconductor nanojunctions in gold CdSe nanodumbbells.

作者信息

Steiner D, Mokari T, Banin U, Millo O

机构信息

Racah Institute of Physics, and Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem, Jerusalem 91904, Israel.

出版信息

Phys Rev Lett. 2005 Jul 29;95(5):056805. doi: 10.1103/PhysRevLett.95.056805. Epub 2005 Jul 28.

Abstract

The electronic properties of metal-semiconductor nanojunctions are investigated by scanning tunneling spectroscopy of gold-tipped CdSe rods. A gap similar to that in bare CdSe nanorods is observed near the nanodumbbell center, while subgap structure emerges near the metal-semiconductor nanocontact. This behavior is attributed to the formation of subgap interface states that vanish rapidly towards the center of the rod, consistent with theoretical predictions. These states lead also to modified Coulomb staircase, and in some cases to negative differential conductance, on the gold tips.

摘要

通过对金尖端CdSe棒进行扫描隧道光谱研究了金属-半导体纳米结的电学性质。在纳米哑铃中心附近观察到与裸CdSe纳米棒中类似的能隙,而在金属-半导体纳米接触附近出现了亚能隙结构。这种行为归因于亚能隙界面态的形成,这些态朝着棒的中心迅速消失,这与理论预测一致。这些态还导致金尖端上的库仑阶梯发生改变,在某些情况下导致负微分电导。

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