Sato Masahiro, Aikawa Hisashi, Kobayashi Kensuke, Katsumoto Shingo, Iye Yasuhiro
Institute for Solid State Physics, University of Tokyo, 5-1-5 Kashiwanoha, Chiba 277-8581, Japan.
Phys Rev Lett. 2005 Aug 5;95(6):066801. doi: 10.1103/PhysRevLett.95.066801. Epub 2005 Aug 1.
We have observed the Fano-Kondo antiresonance in a quantum wire with a side-coupled quantum dot. In a weak coupling regime, dips due to the Fano effect appeared. As the coupling strength increased, conductance in the regions between the dips decreased alternately. From the temperature dependence and the response to the magnetic field, we conclude that the conductance reduction is due to the Fano-Kondo antiresonance. At a Kondo valley with the Fano parameter q approximately 0, the phase shift is locked to pi/2 against the gate voltage when the system is close to the unitary limit in agreement with theoretical predictions by Gerland et al. [Phys. Rev. Lett. 84, 3710 (2000)].
我们在一个带有侧向耦合量子点的量子线中观测到了法诺 - 近藤反共振。在弱耦合 regime 中，出现了由于法诺效应导致的凹陷。随着耦合强度增加，凹陷之间区域的电导交替下降。从温度依赖性和对磁场的响应来看，我们得出电导降低是由于法诺 - 近藤反共振。在法诺参数 q 约为 0 的近藤谷处，当系统接近幺正极限时，相移相对于栅极电压被锁定在 π/2，这与格兰德等人的理论预测一致 [《物理评论快报》84, 3710 (2000)]。
