College of Sciences, Northeastern University, Shenyang, 110819, China.
Nanoscale Res Lett. 2012 Sep 17;7(1):510. doi: 10.1186/1556-276X-7-510.
: We investigate the spin accumulations of Aharonov-Bohm interferometers with embedded quantum dots by considering spin bias in the leads. It is found that regardless of the interferometer configurations, the spin accumulations are closely determined by their quantum interference features. This is mainly manifested in the dependence of spin accumulations on the threaded magnetic flux and the nonresonant transmission process. Namely, the Aharonov-Bohm-Fano effect is a necessary condition to achieve the spin accumulation in the quantum dot of the resonant channel. Further analysis showed that in the double-dot interferometer, the spin accumulation can be detailedly manipulated. The spin accumulation properties of such structures offer a new scheme of spin manipulation. When the intradot Coulomb interactions are taken into account, we find that the electron interactions are advantageous to the spin accumulation in the resonant channel.
我们通过考虑引线中的自旋偏置来研究具有嵌入式量子点的 Aharonov-Bohm 干涉仪中的自旋积累。结果发现，无论干涉仪的配置如何，自旋积累都与其量子干涉特性密切相关。这主要表现在自旋积累对穿过的磁通和非共振传输过程的依赖性上。也就是说，Aharonov-Bohm-Fano 效应是在共振通道的量子点中实现自旋积累的必要条件。进一步的分析表明，在双量子点干涉仪中，可以对自旋积累进行详细的操控。这种结构的自旋积累特性提供了一种新的自旋操控方案。当考虑到量子点内的库仑相互作用时，我们发现电子相互作用有利于共振通道中的自旋积累。
