Shkolnikov Y P, Misra S, Bishop N C, De Poortere E P, Shayegan M
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA.
Phys Rev Lett. 2005 Aug 5;95(6):066809. doi: 10.1103/PhysRevLett.95.066809.
We report measurements of the interaction-induced quantum Hall effect in a spin-polarized AlAs two-dimensional electron system where the electrons occupy two in-plane conduction band valleys. Via the application of in-plane strain, we tune the energies of these valleys and measure the energy gap of the quantum Hall state at filling factor nu = 1. The gap has a finite value even at zero strain and, with strain, rises much faster than expected from a single-particle picture, suggesting that the lowest energy charged excitations at nu = 1 are "valley Skyrmions."
我们报告了在自旋极化的AlAs二维电子系统中相互作用诱导的量子霍尔效应的测量结果，其中电子占据两个面内导带谷。通过施加面内应变，我们调节这些谷的能量，并测量填充因子ν = 1时量子霍尔态的能隙。即使在零应变下，该能隙也具有有限值，并且随着应变的增加，其上升速度比单粒子图像预期的要快得多，这表明ν = 1时能量最低的带电激发是“谷斯格明子”。
