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磁屏蔽常数的准相对论理论。III. 准相对论二阶莫雷尔-普列塞特微扰理论及其在碲化合物中的应用。

Quasirelativistic theory for the magnetic shielding constant. III. Quasirelativistic second-order Møller-Plesset perturbation theory and its application to tellurium compounds.

作者信息

Fukuda Ryoichi, Nakatsuji Hiroshi

机构信息

Department of Synthetic Chemistry and Biological Chemistry, Graduate School of Engineering, Kyoto University, Kyoto-Daigaku-Katsura, Nishikyo-ku, Kyoto 615-8510, Japan.

出版信息

J Chem Phys. 2005 Jul 22;123(4):044101. doi: 10.1063/1.1949204.

Abstract

The quasirelativistic (QR) generalized unrestricted Hartree-Fock method for the magnetic shielding constant [R. Fukuda, M. Hada, and H. Nakatsuji, J. Chem. Phys. 118, 1015 (2003); R. Fukuda, M. Hada, and H. Nakatsuji, J. Chem. Phys.118, 1027 (2003)] has been extended to include the electron correlation effect in the level of the second-order Møller-Plesset perturbation theory (MP2). We have implemented the energy gradient and finite-perturbation methods to calculate the magnetic shielding constant at the QR MP2 level and applied to the magnetic shielding constants and the NMR chemical shifts of 125Te nucleus in various tellurium compounds. The calculated magnetic shielding constants and NMR chemical shifts well reproduced the experimental values. The relations of the chemical shifts with the natures of ligands, and the tellurium oxidation states were investigated. The chemical shifts in different valence states were explained by the paramagnetic shielding and spin-orbit terms. The tellurium 5p electrons are the dominant origin of the chemical shifts in the Te I and Te II compounds and the chemical shifts were explained by the p-hole mechanism. The tellurium d electrons also play an important role in the chemical shifts of the hypervalent compounds.

摘要

用于计算磁屏蔽常数的准相对论(QR)广义无限制哈特里 - 福克方法[R. 福田、M. 羽田和H. 中津次二,《化学物理杂志》118, 1015 (2003); R. 福田、M. 羽田和H. 中津次二,《化学物理杂志》118, 1027 (2003)]已扩展至在二阶莫勒 - 普莱塞特微扰理论(MP2)水平纳入电子相关效应。我们已实现能量梯度法和有限微扰法来计算QR MP2水平的磁屏蔽常数,并将其应用于各种碲化合物中(^{125})Te核的磁屏蔽常数和核磁共振化学位移。计算得到的磁屏蔽常数和核磁共振化学位移很好地重现了实验值。研究了化学位移与配体性质以及碲氧化态的关系。通过顺磁屏蔽和自旋 - 轨道项解释了不同价态下的化学位移。碲5p电子是Te I和Te II化合物中化学位移的主要来源,并且化学位移通过p空穴机制得以解释。碲d电子在高价化合物的化学位移中也起着重要作用。

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