Min Yo-Sep, Bae Eun Ju, Oh Byung Seok, Kang Donghun, Park Wanjun
Materials & Devices Research Center, Samsung Advanced Institute of Technology, Yong-In, Kyeongki-Do, 449-712 Korea.
J Am Chem Soc. 2005 Sep 14;127(36):12498-9. doi: 10.1021/ja054108w.
Preferential growth of pure single-walled carbon nanotubes (SWNTs) over multi-walled carbon nanotubes (MWNTs) was demonstrated at low temperature by water plasma chemical vapor deposition. Water plasma lowered the growth temperature down to 450 degrees C, and the grown nanotubes were single-walled without carbonaceous impurities and MWNTs. The preferential growth of pure SWNTs over MWNTs was proven with micro-Raman spectroscopy, high-resolution transmission electron microscopy, and electrical characterization of the grown nanotube networks.
通过水等离子体化学气相沉积法在低温下实现了纯单壁碳纳米管（SWNTs）相对于多壁碳纳米管（MWNTs）的优先生长。水等离子体将生长温度降低至450摄氏度，生长出的纳米管为单壁结构，且不含碳质杂质和多壁碳纳米管。通过显微拉曼光谱、高分辨率透射电子显微镜以及对生长的纳米管网络进行电学表征，证实了纯单壁碳纳米管相对于多壁碳纳米管的优先生长。
