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大规模水平排列的单壁碳纳米管阵列的引导生长及其在薄膜晶体管中的应用。

Guided growth of large-scale, horizontally aligned arrays of single-walled carbon nanotubes and their use in thin-film transistors.

作者信息

Kocabas Coskun, Hur Seung-Hyun, Gaur Anshu, Meitl Matthew A, Shim Moonsub, Rogers John A

机构信息

Department of Physics, University of Illinois at Urbana/Champaign, USA.

出版信息

Small. 2005 Nov;1(11):1110-6. doi: 10.1002/smll.200500120.

DOI:10.1002/smll.200500120
PMID:17193404
Abstract

A convenient process for generating large-scale, horizontally aligned arrays of pristine, single-walled carbon nanotubes (SWNTs) is described. The approach uses guided growth, by chemical vapor deposition (CVD), of SWNTs on miscut single-crystal quartz substrates. Studies of the growth reveal important relationships between the density and alignment of the tubes, the CVD conditions, and the morphology of the quartz. Electrodes and dielectrics patterned on top of these arrays yield thin-film transistors that use the SWNTs as effective thin-film semiconductors. The ability to build high-performance devices of this type suggests significant promise for large-scale aligned arrays of SWNTs in electronics, sensors, and other applications.

摘要

本文描述了一种用于生成大规模、水平排列的原始单壁碳纳米管(SWNTs)阵列的便捷方法。该方法通过化学气相沉积(CVD)在错切的单晶硅石英衬底上引导SWNTs生长。对生长过程的研究揭示了碳纳米管的密度和排列、CVD条件以及石英形态之间的重要关系。在这些阵列顶部图案化的电极和电介质可制成使用SWNTs作为有效薄膜半导体的薄膜晶体管。制造这种高性能器件的能力表明,SWNTs大规模排列阵列在电子、传感器和其他应用中具有巨大潜力。

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