通过扫描隧道显微镜研究氯甲烷在Si(001)上的解离吸附。

Dissociative adsorption of methyl chloride on Si(001) studied by scanning tunneling microscopy.

作者信息

Woelke Axel, Imanaka Soichi, Watanabe Shinichi, Goto Seishiro, Hashinokuchi Michihiro, Okada Michio, Kasai Toshio

机构信息

Department of Chemistry, Graduate School of Science, Osaka University, Toyonaka, Osaka 560-0043, Japan.

出版信息

J Electron Microsc (Tokyo). 2005;54 Suppl 1:i21-4. doi: 10.1093/jmicro/54.suppl_1.i21.

DOI:10.1093/jmicro/54.suppl_1.i21

PMID:16157635

Abstract

Chemical reactions of methyl chloride (CH3Cl) on a clean Si(001) surface at approximately 300 K are studied by means of scanning tunneling microscopy (STM) under ultra-high-vacuum conditions. The features appearing in the STM images are identified with the possible products of dissociated CH3 and Cl, and their distribution is also evaluated as well as the development of their distribution with increasing CH(3)Cl doses. The amount of Cl atoms found on the surface is approximately twice as large as that of the CH3 molecules. This leads to the conclusion that dissociative adsorption of CH3Cl on Si occurs in different processes: CH3Cl(precursor) --> CH3(ad) + Cl(ad) and CH3Cl(precursor) --> CH3(gas) + Cl(ad).

摘要

在超高真空条件下，通过扫描隧道显微镜（STM）研究了约300K时清洁的Si(001)表面上氯甲烷（CH₃Cl）的化学反应。STM图像中出现的特征与解离的CH₃和Cl的可能产物相对应，同时评估了它们的分布以及随着CH₃Cl剂量增加其分布的变化情况。表面上发现的Cl原子数量约为CH₃分子数量的两倍。这导致得出结论：CH₃Cl在Si上的解离吸附发生在不同过程中：CH₃Cl（前驱体）→CH₃（吸附态）+Cl（吸附态）和CH₃Cl（前驱体）→CH₃（气态）+Cl（吸附态）。