生长在硅和氧化硅衬底上的单壁碳纳米管的电子显微镜成像。

Electron-microscopic imaging of single-walled carbon nanotubes grown on silicon and silicon oxide substrates.

作者信息

Homma Yoshikazu, Takagi Daisuke, Suzuki Satoru, Kanzaki Ken-ich, Kobayashi Yoshihiro

机构信息

NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, Atsugi-shi, Kanagawa 243-0198, Japan.

出版信息

J Electron Microsc (Tokyo). 2005;54 Suppl 1:i3-7. doi: 10.1093/jmicro/54.suppl_1.i3.

DOI:10.1093/jmicro/54.suppl_1.i3

PMID:16157637

Abstract

Direct imaging of single-walled carbon nanotubes (SWNTs) suspended on pillar-patterned Si or SiO2 substrates is investigated using transmission electron microscopy (TEM) and scanning electron microscopy (SEM). The suspended nanotubes are successfully observed by direct TEM imaging and it is seen that they have either individual or bundles of SWNTs. Low energy (< or =2 keV) SEM produces high contrast images of suspended SWNTs. On the contrary, when SWNTs contact a SiO2 substrate, they are imaged using electron-beam induced current. The image brightness depends on the length of SWNTs.

摘要

利用透射电子显微镜（TEM）和扫描电子显微镜（SEM）研究了悬浮在柱状图案化硅或二氧化硅衬底上的单壁碳纳米管（SWNT）的直接成像。通过直接TEM成像成功观察到了悬浮的纳米管，并且可以看到它们是单根的SWNT或SWNT束。低能量（≤2 keV）SEM产生了悬浮SWNT的高对比度图像。相反，当SWNT与二氧化硅衬底接触时，利用电子束诱导电流对它们进行成像。图像亮度取决于SWNT的长度。