Warner Jamie H, Schäffel Franziska, Zhong Guofang, Rümmeli Mark H, Büchner Bernd, Robertson John, Briggs G Andrew D
Department of Materials, University of Oxford, Parks Road, Oxford, United Kingdom.
ACS Nano. 2009 Jun 23;3(6):1557-63. doi: 10.1021/nn900362a.
We investigate the long-standing question of whether electrons accelerated at 80 kV are below the knock-on damage threshold for single-walled carbon nanotubes (SWNTs). Aberration-corrected high-resolution transmission electron microscopy is used to directly image the atomic structure of the SWNTs and provides in situ monitoring of the structural modification induced by electron beam irradiation at 80 kV. We find that SWNTs with small diameters of 1 nm are damaged by the electron beam, and defects are produced in the side walls that can lead to their destruction. SWNTs with diameters of 1.3 nm and larger are more stable against degradation, and stability increases with diameter. The effect of diameter, defects, and exterior contamination on the inherent stability of SWNTs under electron beam irradiation is investigated.
在80 kV电压下加速的电子是否低于单壁碳纳米管(SWNTs)的撞击损伤阈值。使用像差校正高分辨率透射电子显微镜直接成像SWNTs的原子结构,并对80 kV电子束辐照引起的结构变化进行原位监测。我们发现,直径为1 nm的小直径SWNTs会被电子束损坏,侧壁会产生缺陷,这可能导致它们的破坏。直径为1.3 nm及更大的SWNTs对降解更稳定,并且稳定性随直径增加。研究了直径、缺陷和外部污染对电子束辐照下SWNTs固有稳定性的影响。