Xiong De-ping, Zhang Xi-qing, Lin Peng, Wang Li
Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China.
Guang Pu Xue Yu Guang Pu Fen Xi. 2005 Jun;25(6):832-5.
300 nm thick aluminum films were deposited on SiO2 substrates by heat evaporation. At 0 degrees C, 40 V DC voltage, the authors successfully prepared high density Al2O3 films by anodic oxidation on SiO2 substrates with 15 wt% H2SO4 as electrolyte, and AFM was employed to study the film surface morphology. At room temperature the authors measured the photoluminescence spectrum of Al2O3 films prepared at different anodic voltages excited by Xe lamp. In addition, the authors monitored their excitation spectra of different emission peaks, and the authors found that the relative emission intensity gets weaker and shifts to lower energy at higher anodic voltage. At 40 V anodic voltage the authors observed new 356 nm ultraviolet emission, which has the same 210 nm excitation emission. Based on the discussion of the relative intensity of the PL spectra of anodic alumina at different voltages, the authors suggest that F and F+ oxygen vacancy defects were responsible for the observed 356 and 386 nm ultraviolet photoluminescence from Al2O3 anodic film at 40 V voltage.
通过热蒸发在SiO₂衬底上沉积了300纳米厚的铝膜。在0摄氏度、40伏直流电压下，作者以15 wt%的H₂SO₄作为电解液，在SiO₂衬底上通过阳极氧化成功制备了高密度Al₂O₃膜，并采用原子力显微镜（AFM）研究膜的表面形貌。在室温下，作者测量了由氙灯激发的不同阳极电压下制备的Al₂O₃膜的光致发光光谱。此外，作者监测了不同发射峰的激发光谱，发现随着阳极电压升高，相对发射强度变弱并向低能量方向移动。在40伏阳极电压下，作者观察到新的356纳米紫外发射，其具有相同的210纳米激发发射。基于对不同电压下阳极氧化铝PL光谱相对强度的讨论，作者认为F和F⁺氧空位缺陷是在40伏电压下Al₂O₃阳极膜中观察到的356和386纳米紫外光致发光的原因。
