具有可控顶角的菱形-六边形半导体纳米锥。

Diamond-hexagonal semiconductor nanocones with controllable apex angle.

作者信息

Cao Linyou, Laim Lee, Ni Chaoying, Nabet Bahram, Spanier Jonathan E

机构信息

Department of Materials Science and Engineering, Drexel University, Philadelphia, Pennsylvania 19104, USA.

出版信息

J Am Chem Soc. 2005 Oct 12;127(40):13782-3. doi: 10.1021/ja0544814.

DOI:10.1021/ja0544814

PMID:16201786

Abstract

We report on the synthesis of nanostructured and crystalline tapered Si and Ge polyhedra via metal-catalyzed chemical vapor deposition. These Si and Ge nanocones (SiNCs, GeNCs) possess tips with near-atomic sharpness, micron-scaled bases, hexagonal cross-sections, and controllable apex angles. High-resolution transmission electron microscopy, selected-area electron diffraction and Raman scattering spectroscopy and analysis indicate that the SiNCs are of the diamond-hexagonal Si(IV) phase.

摘要

我们报道了通过金属催化化学气相沉积法合成纳米结构的结晶锥形硅和锗多面体。这些硅和锗纳米锥（SiNCs，GeNCs）具有近乎原子级尖锐的尖端、微米级的底部、六边形横截面以及可控的顶角。高分辨率透射电子显微镜、选区电子衍射以及拉曼散射光谱和分析表明，SiNCs为金刚石 - 六方Si(IV)相。