湿法化学清洗过程中硅片表面颗粒去除的机制。
Mechanisms of particle removal from silicon wafer surface in wet chemical cleaning process.
作者信息
Qin Kuide, Li Yongcheng
机构信息
Department of Chemical Engineering, University of Florida, Gainesville, FL 32611, USA.
出版信息
J Colloid Interface Sci. 2003 May 15;261(2):569-74. doi: 10.1016/S0021-9797(03)00053-5.
A quantitative mechanism of particle removal from silicon wafer surfaces by a wet chemical cleaning process is proposed. The particles are removed from the surface due to the combined effects of chemical etching and a net repulsive interaction between the particle and surface. The mechanism suggests that a critical etching depth, which has been determined theoretically, and an optimal etching rate, which can be determined from etching profile calculation, are required for particle removal. The study will help in the optimization of cleaning processes and formulation of superior cleaning solutions.
提出了一种通过湿法化学清洗工艺从硅片表面去除颗粒的定量机制。由于化学蚀刻以及颗粒与表面之间的净排斥相互作用的综合影响，颗粒从表面被去除。该机制表明，颗粒去除需要理论上确定的临界蚀刻深度以及可从蚀刻轮廓计算得出的最佳蚀刻速率。该研究将有助于优化清洗工艺并制定更优质的清洗溶液配方。
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