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KvAP电压依赖性钾离子通道中门控电荷精氨酸位移的校准测量。

Calibrated measurement of gating-charge arginine displacement in the KvAP voltage-dependent K+ channel.

作者信息

Ruta Vanessa, Chen Jiayun, MacKinnon Roderick

机构信息

Howard Hughes Medical Institute, Laboratory of Molecular Neurobiology and Biophysics, New York 10021, USA.

出版信息

Cell. 2005 Nov 4;123(3):463-75. doi: 10.1016/j.cell.2005.08.041.

DOI:10.1016/j.cell.2005.08.041
PMID:16269337
Abstract

Voltage-dependent ion channels open and conduct ions in response to changes in cell-membrane voltage. The voltage sensitivity of these channels arises from the motion of charged arginine residues located on the S4 helices of the channel's voltage sensors. In KvAP, a prokaryotic voltage-dependent K+ channel, the S4 helix forms part of a helical hairpin structure, the voltage-sensor paddle. We have measured the membrane depth of residues throughout the KvAP channel using avidin accessibility to different-length tethered biotin reagents. From these measurements, we have calibrated the tether lengths and derived the thickness of the membrane that forms a barrier to avidin penetration, allowing us to determine the magnitude of displacement of the voltage-sensor paddles during channel gating. Here we show that the voltage-sensor paddles are highly mobile compared to other regions of the channel and transfer the gating-charge arginines 15-20 A through the membrane to open the pore.

摘要

电压依赖性离子通道会响应细胞膜电压的变化而打开并传导离子。这些通道的电压敏感性源于位于通道电压传感器S4螺旋上的带电荷精氨酸残基的运动。在原核生物电压依赖性钾通道KvAP中,S4螺旋形成了一种螺旋发夹结构的一部分,即电压传感器桨叶。我们利用抗生物素蛋白对不同长度的连接生物素试剂的可及性,测量了整个KvAP通道中残基的膜深度。通过这些测量,我们校准了连接长度,并推导出形成抗生物素蛋白渗透屏障的膜的厚度,这使我们能够确定通道门控期间电压传感器桨叶的位移幅度。在这里我们表明,与通道的其他区域相比,电压传感器桨叶具有高度的流动性,并通过膜传递门控电荷精氨酸15 - 20埃以打开孔道。

相似文献

1
Calibrated measurement of gating-charge arginine displacement in the KvAP voltage-dependent K+ channel.KvAP电压依赖性钾离子通道中门控电荷精氨酸位移的校准测量。
Cell. 2005 Nov 4;123(3):463-75. doi: 10.1016/j.cell.2005.08.041.
2
The principle of gating charge movement in a voltage-dependent K+ channel.电压依赖性钾通道中门控电荷移动的原理。
Nature. 2003 May 1;423(6935):42-8. doi: 10.1038/nature01581.
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X-ray structure of a voltage-dependent K+ channel.电压依赖性钾离子通道的X射线结构
Nature. 2003 May 1;423(6935):33-41. doi: 10.1038/nature01580.
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Computer simulation of the KvAP voltage-gated potassium channel: steered molecular dynamics of the voltage sensor.KvAP电压门控钾通道的计算机模拟:电压感受器的引导分子动力学
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Membrane insertion of a potassium-channel voltage sensor.钾通道电压感受器的膜插入
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A proton pore in a potassium channel voltage sensor reveals a focused electric field.钾通道电压感受器中的质子孔揭示了一个聚焦电场。
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Gating charge displacement in voltage-gated ion channels involves limited transmembrane movement.电压门控离子通道中的门控电荷位移涉及有限的跨膜移动。
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Structural biology. Voltage sensor meets lipid membrane.结构生物学。电压传感器与脂质膜相遇。
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