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Electroluminescence from a single-nanocrystal transistor.

作者信息

Gudiksen Mark S, Maher Kristin N, Ouyang Lian, Park Hongkun

机构信息

Department of Chemistry, Harvard University, Cambridge, Massachusetts 02138, USA.

出版信息

Nano Lett. 2005 Nov;5(11):2257-61. doi: 10.1021/nl0516005.

Abstract

We report the fabrication and characterization of light-emitting transistors incorporating individual cadmium selenide (CdSe) nanocrystals. Electrical measurements conducted at low bias voltage and low temperature show clear evidence of Coulomb blockade behavior, indicating that electrons pass through the nanocrystal by single-electron tunneling. Once the bias voltage exceeds the band gap of CdSe, devices with asymmetric tunnel barriers emit linearly polarized light. Combined analyses of the electrical and optical data indicate that the tunnel couplings between the nanorod and the metallic electrodes change significantly as a function of bias voltage and light emission results from the inelastic scattering of tunneling electrons.

摘要

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