Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA 19104, USA. Complex Assemblies of Soft Matter, CNRS-SOLVAY-PENN UMI 3254, Bristol, PA 19007-3624, USA. Rare Metals Research Center, Korea Institute of Geoscience and Mineral Resources, 124 Gwahang-no, Yuseong-Gu, Daejeon, 305-350, Korea.
Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA 19104, USA.
Science. 2016 Apr 8;352(6282):205-8. doi: 10.1126/science.aad0371.
Synthetic methods produce libraries of colloidal nanocrystals with tunable physical properties by tailoring the nanocrystal size, shape, and composition. Here, we exploit colloidal nanocrystal diversity and design the materials, interfaces, and processes to construct all-nanocrystal electronic devices using solution-based processes. Metallic silver and semiconducting cadmium selenide nanocrystals are deposited to form high-conductivity and high-mobility thin-film electrodes and channel layers of field-effect transistors. Insulating aluminum oxide nanocrystals are assembled layer by layer with polyelectrolytes to form high-dielectric constant gate insulator layers for low-voltage device operation. Metallic indium nanocrystals are codispersed with silver nanocrystals to integrate an indium supply in the deposited electrodes that serves to passivate and dope the cadmium selenide nanocrystal channel layer. We fabricate all-nanocrystal field-effect transistors on flexible plastics with electron mobilities of 21.7 square centimeters per volt-second.
通过调整纳米晶的尺寸、形状和组成，合成方法可以制备具有可调物理性质的胶体纳米晶库。在这里，我们利用胶体纳米晶的多样性，并设计材料、界面和工艺，使用基于溶液的工艺构建全纳米晶电子器件。将金属银和半导体硒化镉纳米晶沉积以形成具有高导电性和高迁移率的薄膜电极和场效应晶体管的沟道层。用聚电解质逐层组装绝缘氧化铟纳米晶，形成具有高介电常数的栅极绝缘层，用于低压器件操作。将金属铟纳米晶与银纳米晶共分散，将铟源集成到沉积的电极中，用于钝化和掺杂硒化镉纳米晶沟道层。我们在柔性塑料上制造了全纳米晶场效应晶体管，其电子迁移率为 21.7 平方厘米/伏秒。
