AuBuchon Joseph F, Daraio Chiara, Chen Li-Han, Gapin Andrew I, Jin Sungho
Materials Science and Engineering Program, Mechanical and Aerospace Engineering Department, University of California-San Diego, La Jolla, California 92093-0411, USA.
J Phys Chem B. 2005 Dec 29;109(51):24215-9. doi: 10.1021/jp0558627.
Aligned carbon nanotubes have been grown using microwave plasma enhanced chemical vapor deposition (PECVD). The carbon nanotubes are nucleated from iron catalyst particles which, during growth, remain adherent to the silicon substrates. By analysis with high-resolution electron microscopy, we observe iron silicide roots penetrating into the silicon substrate at the interface of the catalyst particles and the substrate, thus providing strong adhesion of the carbon nanotubes onto the substrate. The iron silicide roots assist in the attachment of the catalyst particles to the substrate and play a role in the evolution of the catalyst particle morphology and resulting base growth mode. Carbon nanotubes grown by microwave PECVD could exhibit superior electrical and thermal transport properties over other PECVD processes, so an understanding of the growth mechanism is important for utilization in device applications.
已使用微波等离子体增强化学气相沉积（PECVD）生长出排列的碳纳米管。碳纳米管由铁催化剂颗粒成核，在生长过程中，这些颗粒仍附着在硅衬底上。通过高分辨率电子显微镜分析，我们观察到硅化铁根在催化剂颗粒与衬底的界面处穿透到硅衬底中，从而使碳纳米管牢固地附着在衬底上。硅化铁根有助于催化剂颗粒附着在衬底上，并在催化剂颗粒形态演变及由此产生的基部生长模式中发挥作用。与其他PECVD工艺相比，通过微波PECVD生长的碳纳米管可能表现出优异的电学和热输运性能，因此了解其生长机制对于在器件应用中的利用非常重要。
