通过微波等离子体化学气相沉积法实现垂直排列的单壁碳纳米管根部生长的直接证据。

Direct evidence for root growth of vertically aligned single-walled carbon nanotubes by microwave plasma chemical vapor deposition.

作者信息

Iwasaki Takayuki, Zhong Goufang, Aikawa Takumi, Yoshida Tsuyoshi, Kawarada Hiroshi

出版信息

J Phys Chem B. 2005 Oct 27;109(42):19556-9. doi: 10.1021/jp054465t.

Abstract

The root growth mode of extremely dense and vertically aligned single-walled carbon nanotubes (SWNTs) synthesized by microwave plasma chemical vapor deposition was clarified by a new method, marker growth, which does not require transmission electron microscopy. SWNT layers were grown intermittently on a substrate, and a line between the layers was used as a marker to identify the growth mode. Micro-Raman spectroscopy revealed that the SWNT layers have the same diameter distribution.

摘要

通过一种新方法——标记生长法（该方法无需透射电子显微镜），阐明了利用微波等离子体化学气相沉积法合成的极其致密且垂直排列的单壁碳纳米管（SWNTs）的根部生长模式。SWNT层在基板上间歇性生长，层与层之间的线用作标记以识别生长模式。显微拉曼光谱显示，SWNT层具有相同的直径分布。