Style Robert W, Worster M Grae
Institute of Theoretical Geophysics, Department of Applied Mathematics and Theoretical Physics, University of Cambridge, CB3 9EW Cambridge, England.
Phys Rev Lett. 2005 Oct 21;95(17):176102. doi: 10.1103/PhysRevLett.95.176102. Epub 2005 Oct 19.
We present a new model of surface transport in premelted films that is applicable to a wide range of materials close to their melting points. We illustrate its use by applying it to the evolution of a grain-boundary groove in a high vapor pressure material and show that Mullins's classical equation describing transport driven by gradients in surface curvature is reproduced asymptotically. The microscopic contact angle at the groove root is found to be modified over a thin boundary layer, and the apparent contact angle is determined. An explicit transport coefficient is derived that governs the evolution rate of systems controlled by surface transport through premelted films. The transport coefficient is found to depend on temperature and diverges as the bulk melting temperature is approached.
我们提出了一种适用于接近熔点的多种材料的预熔薄膜表面输运新模型。通过将其应用于高蒸气压材料中晶界沟槽的演化来说明该模型的用途,并表明描述由表面曲率梯度驱动的输运的穆林斯经典方程是渐近再现的。发现沟槽根部的微观接触角在薄边界层上发生了改变,并确定了表观接触角。推导了一个明确的输运系数,该系数控制着通过预熔薄膜的表面输运所控制的系统的演化速率。发现该输运系数取决于温度,并且在接近体相熔点时发散。