Hamieh Tayssir, Ibrahim Ali, Khatir Zoubir
Faculty of Science and Engineering, Maastricht University, P.O. Box 616, 6200 MD Maastricht, The Netherlands.
Systèmes et Applications des Technologies de l'Information et de l'Energie (SATIE), Gustave Eiffel University, 25 allée des Marronniers, 78000 Versailles, France.
Micromachines (Basel). 2023 Sep 17;14(9):1781. doi: 10.3390/mi14091781.
In a previous paper, we solved the partial differential equation of Mullins' problem in the case of the evaporation-condensation in electronic devices and gave an exact solution relative to the geometric profile of the grain boundary grooving when materials are submitted to thermal and mechanical solicitation and fatigue effect. In this new research, new modelling of the grain groove profile was proposed and new analytical expressions of the groove profile, the derivative and the groove depth were obtained in the case of diffusion in thin polycrystalline films by the resolution of the fourth differential equation formulated by Mullins that supposed y'2≪1. The obtained analytical solution gave more accurate information on the geometric characteristics of the groove that were necessary to study the depth and the width of the groove. These new findings will open a new way to study with more accuracy the problem of the evaporation-condensation combined to the diffusion phenomenon on the material surfaces with the help of the analytical solutions.
在之前的一篇论文中,我们解决了电子设备中蒸发 - 冷凝情况下穆林斯问题的偏微分方程,并给出了材料在热、机械作用及疲劳效应下晶界刻蚀几何轮廓的精确解。在这项新研究中,我们提出了晶界槽轮廓的新模型,并通过求解穆林斯提出的假设(y'^2\ll1)的四阶微分方程,得到了多晶薄膜扩散情况下槽轮廓、导数和槽深度的新解析表达式。所得到的解析解为研究槽的深度和宽度所需的槽几何特征提供了更准确的信息。这些新发现将为借助解析解更精确地研究材料表面蒸发 - 冷凝与扩散现象相结合的问题开辟一条新途径。