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二氧化钒中的轨道辅助金属-绝缘体转变

Orbital-assisted metal-insulator transition in VO2.

作者信息

Haverkort M W, Hu Z, Tanaka A, Reichelt W, Streltsov S V, Korotin M A, Anisimov V I, Hsieh H H, Lin H-J, Chen C T, Khomskii D I, Tjeng L H

机构信息

II. Physikalisches Institut, Universität zu Köln, Zülpicher Strasse 77, D-50937 Köln, Germany.

出版信息

Phys Rev Lett. 2005 Nov 4;95(19):196404. doi: 10.1103/PhysRevLett.95.196404. Epub 2005 Nov 2.

Abstract

We found direct experimental evidence for an orbital switching in the V 3d states across the metal-insulator transition in VO2. We have used soft-x-ray absorption spectroscopy at the V L2,3 edges as a sensitive local probe and have determined quantitatively the orbital polarizations. These results strongly suggest that, in going from the metallic to the insulating state, the orbital occupation changes in a manner that charge fluctuations and effective bandwidths are reduced, that the system becomes more one dimensional and more susceptible to a Peierls-like transition, and that the required massive orbital switching can only be made if the system is close to a Mott insulating regime.

摘要

我们发现了关于VO₂中金属-绝缘体转变过程中V 3d态轨道切换的直接实验证据。我们利用V L₂,₃边的软X射线吸收光谱作为灵敏的局域探针,并定量测定了轨道极化。这些结果有力地表明,从金属态转变为绝缘态时,轨道占据情况的变化使得电荷涨落和有效带宽减小,系统变得更具一维性且更易发生类皮尔斯转变,并且只有当系统接近莫特绝缘态时才会发生所需的大量轨道切换。

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