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微米级圆柱形离子阱中离子捕获的模拟

Simulations of ion trapping in a micrometer-sized cylindrical ion trap.

作者信息

Austin Daniel E, Cruz Dolores, Blain Matthew G

机构信息

Department of Chemistry and Biochemistry, Brigham Young University, Provo, Utah 84602, USA.

出版信息

J Am Soc Mass Spectrom. 2006 Mar;17(3):430-41. doi: 10.1016/j.jasms.2005.11.020. Epub 2006 Jan 25.

DOI:10.1016/j.jasms.2005.11.020
PMID:16442302
Abstract

We have performed detailed SIMION simulations of ion behavior in micrometer-sized cylindrical ion traps (r0 = 1 microm). Simulations examined the effects of ion and neutral temperature, the pressure and nature of cooling gas, ion mass, trap voltage and frequency, space-charge, fabrication defects, and other parameters on the ability of micrometer-sized traps to store ions. At this size scale voltage and power limitations constrain trap operation to frequencies about 1 GHz and rf amplitudes of tens of volts. Correspondingly, the pseudopotential well depth of traps is shallow, and thermal energies contribute significantly to ion losses. Trapping efficiency falls off gradually as qz approaches 0.908, possibly complicating mass-selective trapping, ejection, or quantitation. Coulombic repulsion caused by multiple ions in a small-volume results in a trapping limit of a single ion per trap. If multiple ions are produced in a trap, all but one ion are ejected within a few microseconds. The remaining ion tends to have favorable trapping parameters and a lifetime about hundreds of microseconds; however, this lifetime is significantly shorter than it would have been in the absence of space-charge. Typical microfabrication defects affect ion trapping only minimally. We recently reported (IJMS 2004, 236, 91-104) on the construction of a massively parallel array of ion traps with dimensions of r0 = 1 microm. The relationship of the simulations to the expected performance of the microfabricated array is discussed.

摘要

我们对微米级圆柱形离子阱(r0 = 1微米)中的离子行为进行了详细的SIMION模拟。模拟研究了离子和中性温度、冷却气体的压力和性质、离子质量、阱电压和频率、空间电荷、制造缺陷以及其他参数对微米级阱存储离子能力的影响。在这个尺寸尺度下,电压和功率限制将阱的操作频率限制在约1 GHz,射频幅度限制在几十伏。相应地,阱的赝势阱深度较浅,热能对离子损失有显著贡献。当qz接近0.908时,俘获效率逐渐下降,这可能会使质量选择性俘获、喷射或定量变得复杂。小体积内多个离子引起的库仑排斥导致每个阱单个离子的俘获极限。如果在一个阱中产生多个离子,除了一个离子外,所有其他离子都会在几微秒内被喷射出去。剩下的离子往往具有良好的俘获参数,寿命约为几百微秒;然而,这个寿命比没有空间电荷时要短得多。典型的微加工缺陷对离子俘获的影响很小。我们最近报道了(《国际分子科学杂志》2004年,236卷,91 - 104页)关于构建尺寸为r0 = 1微米的大规模平行离子阱阵列的研究。讨论了模拟结果与微加工阵列预期性能之间的关系。

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