Zhu Lingbo, Sun Yangyang, Hess Dennis W, Wong Ching-Ping
School of Chemical & Biomolecular Engineering, Georgia Institute of Technology, 311 Ferst Drive, Atlanta, Georgia 30332, USA.
Nano Lett. 2006 Feb;6(2):243-7. doi: 10.1021/nl052183z.
To circumvent the high carbon nanotube (CNT) growth temperature and poor adhesion with the substrates that currently plague CNT implementation, we proposed using CNT transfer technology enabled by open-ended CNTs. The process is featured with separation of CNT growth and CNT device assembly. Field emission testing of the as-assembled CNT devices is in good agreement with the Fowler-Nordheim (FN) equation, with a field enhancement factor of 4,540. This novel technique shows promising applications for positioning CNTs on temperature-sensitive substrates and for the fabrication of field emitters, electrical interconnects, and thermal management structures in microelectronics packaging.
为了规避目前困扰碳纳米管应用的高生长温度以及与衬底的附着力差的问题,我们提出使用由开口端碳纳米管实现的碳纳米管转移技术。该工艺的特点是碳纳米管生长与碳纳米管器件组装相分离。所组装的碳纳米管器件的场发射测试结果与福勒-诺德海姆(FN)方程高度吻合,场增强因子为4540。这种新技术在将碳纳米管定位在温度敏感衬底上以及在微电子封装中制造场发射器、电气互连和热管理结构方面显示出有前景的应用。