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针对铱 - 192能量的新型单剂量金属氧化物半导体场效应晶体管(MOSFET)的剂量学评估。

Dosimetric evaluation of a new OneDose MOSFET for Ir-192 energy.

作者信息

Kinhikar Rajesh A, Sharma Pramod K, Tambe Chandrashekhar M, Deshpande Deepak D

机构信息

Department of Medical Physics, Tata Memorial Hospital, Parel, Mumbai 400 012, India.

出版信息

Phys Med Biol. 2006 Mar 7;51(5):1261-8. doi: 10.1088/0031-9155/51/5/015. Epub 2006 Feb 15.

Abstract

The purpose of this study was to investigate dosimetry (reproducibility, energy correction, relative response with distance from source, linearity with threshold dose, rate of fading, temperature and angular dependence) of a newly designed OneDosetrade mark MOSFET patient dosimetry system for use in HDR brachytherapy with Ir-192 energy. All measurements were performed with a MicroSelectron HDR unit and OneDose MOSFET detectors. All dosimeters were normalized to 3 min post-irradiation to minimize fading effects. All dosimeters gave reproducible readings with mean deviation of 1.8% (SD 0.4) and 2.4% (SD 0.6) for 0 degrees and 180 degrees incidences, respectively. The mean energy correction factor was found to be 1.1 (range 1.06-1.12). Overall, there was 60% and 40% mean response of the MOSFET at 2 and 3 cm, respectively, from the source. MOSFET results showed good agreement with TLD and parallel plate ion chamber. Linear dose response with threshold voltage shift was observed with applied doses of 0.3 Gy-5 Gy with Ir-192 energy. Linearity (R2 = 1) was observed in the MOSFET signal with the applied dose range of 0.3 Gy-5 Gy with Ir-192 energy. Fading effects were less than 1% after 10 min and the MOSFET detectors stayed stable (within 5%) over a period of 1 month. The MOSFET response was found to be decreased by approximately 1.5% at 37 degrees C compared to 20 degrees C. The isotropic response of the MOSFET was found to be within +/-6%. A maximum deviation of 5.5% was obtained between 0 degrees and 180 degrees for both the axes and this should be considered in clinical applications. The small size, cable-less, instant readout, permanent storage of dose and ease of use make the MOSFET a novel dosimeter and beneficial to patients for skin dose measurements with HDRBT using an Ir-192 source compared to the labour demanding and time-consuming TLDs.

摘要

本研究的目的是调查一种新设计的OneDosetrade mark MOSFET患者剂量测定系统在使用铱-192能量进行高剂量率近距离放射治疗时的剂量测定(可重复性、能量校正、与源距离的相对响应、与阈值剂量的线性关系、衰减率、温度和角度依赖性)。所有测量均使用MicroSelectron HDR装置和OneDose MOSFET探测器进行。所有剂量计在辐照后3分钟进行归一化处理,以尽量减少衰减效应。所有剂量计的读数具有可重复性,0度和180度入射角时的平均偏差分别为1.8%(标准差0.4)和2.4%(标准差0.6)。发现平均能量校正因子为1.1(范围1.06 - 1.12)。总体而言,MOSFET在距源2厘米和3厘米处的平均响应分别为60%和40%。MOSFET的结果与热释光剂量计(TLD)和平行板电离室显示出良好的一致性。在施加0.3 Gy - 5 Gy的铱-192能量剂量时,观察到阈值电压偏移与线性剂量响应。在施加0.3 Gy - 5 Gy的铱-192能量剂量范围内,MOSFET信号呈现线性关系(R2 = 1)。10分钟后衰减效应小于1%,并且MOSFET探测器在1个月的时间内保持稳定(在5%以内)。发现与20摄氏度相比,MOSFET在37摄氏度时的响应降低了约1.5%。MOSFET的各向同性响应在±6%以内。两个轴在0度和180度之间的最大偏差为5.5%,这在临床应用中应予以考虑。MOSFET体积小、无电缆、即时读数、剂量永久存储且使用方便,与需要大量人力且耗时的TLD相比,使其成为一种新型剂量计,有利于使用铱-192源进行高剂量率近距离放射治疗时对患者皮肤剂量的测量。

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