Kuroda Marcelo A, Cangellaris Andreas, Leburton Jean-Pierre
Beckman Institute, University of Illinois at Urbana-Champaign, 61801, USA.
Phys Rev Lett. 2005 Dec 31;95(26):266803. doi: 10.1103/PhysRevLett.95.266803. Epub 2005 Dec 21.
We show that the local temperature dependence of thermalized electron and phonon populations along metallic carbon nanotubes is the main reason behind the nonlinear transport characteristics in the high bias regime. Our model is based on the solution of the Boltzmann transport equation considering both optical and zone boundary phonon emission as well as absorption by charge carriers. It also assumes a local temperature along the nanotube, determined self-consistently with the heat transport equation. By using realistic transport parameters, our results not only reproduce experimental data for electronic transport but also provide a coherent interpretation of thermal breakdown under electric stress. In particular, electron and phonon thermalization prohibits ballistic transport in short nanotubes.
我们表明，沿金属碳纳米管热化电子和声子布居的局部温度依赖性是高偏置 regime 中非线性传输特性背后的主要原因。我们的模型基于玻尔兹曼输运方程的解，该方程考虑了光学声子和区域边界声子的发射以及电荷载流子的吸收。它还假设沿纳米管的局部温度，该温度与热输运方程自洽确定。通过使用实际的输运参数，我们的结果不仅再现了电子输运的实验数据，还为电应力下的热击穿提供了连贯的解释。特别是，电子和声子热化阻止了短纳米管中的弹道输运。
