Javey Ali, Guo Jing, Paulsson Magnus, Wang Qian, Mann David, Lundstrom Mark, Dai Hongjie
Department of Chemistry and Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, USA.
Phys Rev Lett. 2004 Mar 12;92(10):106804. doi: 10.1103/PhysRevLett.92.106804.
Single walled carbon nanotubes with Pd Ohmic contacts and lengths ranging from several microns down to 10 nm are investigated by electron transport experiments and theory. The mean-free path (MFP) for acoustic phonon scattering is estimated to be l(ap) approximately 300 nm, and that for optical phonon scattering is l(op) approximately 15 nm. Transport through very short (approximately 10 nm) nanotubes is free of significant acoustic and optical phonon scattering and thus ballistic and quasiballistic at the low- and high-bias voltage limits, respectively. High currents of up to 70 microA can flow through a short nanotube. Possible mechanisms for the eventual electrical breakdown of short nanotubes at high fields are discussed. The results presented here have important implications to high performance nanotube transistors and interconnects.
通过电子输运实验和理论研究了具有钯欧姆接触且长度范围从几微米到10纳米的单壁碳纳米管。声子散射的平均自由程（MFP）估计约为l(ap) ≈ 300纳米，光学声子散射的平均自由程约为l(op) ≈ 15纳米。通过非常短（约10纳米）的纳米管的输运在低偏置电压极限和高偏置电压极限下分别没有显著的声子和光学声子散射，因此分别是弹道输运和准弹道输运。高达70微安的高电流可以流过短纳米管。讨论了短纳米管在高场下最终发生电击穿的可能机制。这里给出的结果对高性能纳米管晶体管和互连具有重要意义。
