Kawamura Yuichiro, Brooks Jason, Brown Julie J, Sasabe Hiroyuki, Adachi Chihaya
CREST program, Japan Science and Technology Agency (JST), 1-32-12 Higashi, Shibuya, Tokyo 150-0011, Japan.
Phys Rev Lett. 2006 Jan 13;96(1):017404. doi: 10.1103/PhysRevLett.96.017404. Epub 2006 Jan 12.
Solid-state self-quenching processes of highly efficient Ir(III) phosphorescent emitters are investigated by the measurement of thin film photoluminescence quantum efficiency and transient lifetime as a function of doping concentration in a host matrix. The radiative decay rate constant is found to be independent from the average distance between dopant molecules (R), and the concentration-quenching rate constant is shown to be dependent on R(-6). The quenching dependence on R strongly suggests that luminescent concentration quenching in a phosphorescent Ir(III) complex:host film is controlled by dipole-dipole deactivating interactions as described by the Förster energy transfer model.
通过测量薄膜光致发光量子效率和瞬态寿命作为主体基质中掺杂浓度的函数,研究了高效铱(III)磷光发射体的固态自猝灭过程。发现辐射衰减速率常数与掺杂分子之间的平均距离(R)无关,并且浓度猝灭速率常数显示出与R(-6)有关。猝灭对R的依赖性强烈表明,磷光铱(III)配合物:主体薄膜中的发光浓度猝灭是由福斯特能量转移模型描述的偶极 - 偶极失活相互作用控制的。